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Download Chemical Mechanical Polishing in Silicon Processing by R.K. Willardson and Eicke R. Weber (Eds.) PDF

By R.K. Willardson and Eicke R. Weber (Eds.)

Due to the fact its inception in 1966, the sequence of numbered volumes referred to as Semiconductors and Semimetals has extraordinary itself during the cautious number of recognized authors, editors, and individuals. The Willardson and Beer sequence, because it is celebrated, has succeeded in generating a number of landmark volumes and chapters. not just did a lot of those volumes make an effect on the time in their ebook, yet they remain well-cited years after their unique free up. lately, Professor Eicke R. Weber of the collage of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a well known professional within the box of semiconductor fabrics, will extra give a contribution to carrying on with the sequence' culture of publishing well timed, hugely appropriate, and long-impacting volumes. the various fresh volumes, reminiscent of Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure units, Oxygen in Silicon, and others promise that this practice should be maintained or even expanded.Reflecting the really interdisciplinary nature of the sphere that the sequence covers, the volumes in Semiconductors and Semimetals were and may stay of serious curiosity to physicists, chemists, fabrics scientists, and machine engineers in glossy undefined.

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H. Kobayashi, H. S. Patent #5,584,751, issued Dec. 17, 1996. 33. P. D. Jackson, S. C. S. Patent #5,643,061, issued July 1, 1997. 34. J. R. Breivogel, M. J. Prince, C. E. S. Patent #5,635,083, issued Jun. 3, 1997. 35. M. T. Sherwood, H. Q. Lee, N. Shendon, S. S. Patent #5,681,215, issued Oct. 28, 1997. 36. M. Leach, Semiconductor International, pp. 137-144, Oct. 1996; Y. S. Patent #5,230,184 (1993). 37. D. E. Weldon, B. A. Nagorski, H. S. Patent #5,593,344, Jan. 14, 1997. 38. A. S. Meyer, T. G. Mallon, B.

Some preliminary work has also been done involving nanosecond pulses of laser light to very rapidly heat localized regions of the wafer causing an abrupt expansion wave to expel particles from the surface of the wafer. This method is intriguing from the point of view of using very small amounts of consumable materials. However, from a CMP tool point of view there are concerns about the size of a cleaner based on pulses of laser light using existing laser technology, as well as about throughput issues.

Figure 13 shows a plot of the pad thickness after polishing 481 wafers on a rotational platform. The bar in the figure indicates the location of the wafer during polish. The effect of pad conditioning on shaping the pad is evident. For the process shown in the figure, the pad was curved to enhance the removal rate in the center of the wafer. Pad shaping is accomplished by adjusting the amount of time the pad conditioner spends at each radius [53]. Other control parameters process engineers may use include the down force exerted by the pad conditioner and the rotation speed of the conditioning disk.

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