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Download An Introduction to Thyristors and Their Applications by M. Ramamoorty PDF

By M. Ramamoorty

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Because of the increased number of carriers in the bottom region, resistance R 1 will Vb \ \ \ Rc Load line ,I A \ p lp - - - - • ie (c) Characteristics Fig. 3 Unijunction transistor. decrease. So, the potential of point C will fall, the diode will get a greater forward bias, and current ;o will increase. Thus, the device will exhibit a negative resistanceregion where an increase in current ie is accompanied by a decrease in the emitter voltage Ve, as shown by curve AB in Fig. 3c. At point B, the entire base I region will be saturated with carriers and resistance Rt will not decrease any more.

A series diode Dz in the gate circuit will prevent the negative gate source current. However, the shunt resistor R 8 c can still bypass a portion of the thermally-generated leakage current across junction ]z when the device is in the blocking state, and thereby improve thermal stability. The use of a negative voltage bias between the gate and the cathode is recommended. This will increase the forward breakover voltage and (dvfdt)-withstanding capability. Similarly, the reverse leakage current will also be reduced by the negative gate bias.

This sequential firing of series-connected SCRs is used for generating impulse voltages. F) by c= 10 ' (3 3) R 1 +VaT/faT · where VaT and loT are the maximum gate-triggering voltage and current, respectively. 8. The gate source voltage is the off-state voltage across each SCR. Because of diode D2, the potential of points c, d will not be the same. The resulting circulating currents may turn on the SCRs. These currents must be minimised by selecting appropriate equalising circuit parameters so that the string is turned on only when a gate signal is applied to the bottom SCR.

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